By Shun Lien Chuang
Emphasizes the idea of semiconductor optoelectronic units, demonstrating comparisons among theoretical and experimental effects. offers such very important themes as semiconductor heterojunctions and band constitution calculations close to the band edges for bulk and quantum-well semiconductors. info semiconductor lasers together with double-heterostructure, stripe-geometry gain-guided semiconductor, allotted suggestions and surface-emitting. Systematically investigates high-speed modulation of semiconductor lasers utilizing linear and nonlinear earnings. positive aspects new matters corresponding to the theories at the band buildings of strained semiconductors and strained quantum-well lasers. Covers key parts at the back of the operation of semiconductor lasers, modulators and photodetectors. An Instructor's handbook providing distinctive recommendations to the entire difficulties within the booklet is on the market from the Wiley editorial division
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Extra resources for Physics of Optoelectronic Devices (Wiley Series in Pure and Applied Optics)
52. A. , Selected Papers on Sertzicorzd~~ctorIrzfr~zred Detectors, SPIE Milestone Series, Vol. MS66, SPIE Optical Engineering Press, Bellingham, WA, 1992. 53. M. 0. elength Irzfrared Detectors, Artech House, Boston, MA 1993. ~ o n l i n & r Optics 54. N. Bioembergen, No~zlittear Optics, Addison-Wesley, Redwood City, CA 1992. A. , 1965). 55. R. W. Boyd, Nonlinear Optics, Academic, San Diego, 1992. 56. A. C. Newell and J. V. Moloney, Novllinenr Optics, Addison-Wesley, Redwood City, CA 1992. 57. Y.
Furthermore, for a constant light intensity, we find the steady-state solution Therefore, the amount of the excess carrier concentration is simply the optical generation rate G, multiplied by the carrier lifetime. is the length of the semiconductor. * ACT = q ( ~ , , S n+ P , ~ P ) is called the photodonductivity. We find - cr(wn + w,)Go~,? which is proportionaI to the generation rate and the carrier lifetime. The photocurrent is and A is the cross-sectional area of the sernicond-crctor-. For most seioicondtlctors, 'the electrorl mobility is z-nxcl?
Boyd, Nonlinear Optics, Academic, San Diego, 1992. 56. A. C. Newell and J. V. Moloney, Novllinenr Optics, Addison-Wesley, Redwood City, CA 1992. 57. Y. R. Shen, The Pi-itrclples of Norzlirlear Optics, Wiley, New York, 1984. 58. H. M. ': Academic, San Diego, 1985. 59. H. , Opticnl Nonlirtenl-ifies and lr~stnbilitiesilz Sernicond~~ctors, Academic, San Diego, 1988. PART Fundamentals Basic Semiconductor Electronics In the study of semiconductor devices such as diodes and transistors, the characteristics of the devices are described by the voitage-current relations.