Download Advancement of Materials and Nanotechnology II: Selected, by Norlida Kamarulzaman, Wong Tin Wui, Sabirin Mohamed, PDF

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By Norlida Kamarulzaman, Wong Tin Wui, Sabirin Mohamed, Roshidah Rusdi, Nor Fadilah Chayed

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Extra resources for Advancement of Materials and Nanotechnology II: Selected, Peer Reviewed Papers from the International Conference on the Advancement of Materials and ... 29 - Dec

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Phys. Chem. Solid Vol. 54 (1993) p. 635 [24] P. J. Vandamme, Infrared Phys. Technol. Vol. 35 (1993) p. M. Ravindra, S. K. Srivastava, Phys. Stat. Sol. (B) Vol. 93 (1979) p. L. J. Vandamme, J. Appl. Phys. Vol. 77 (1995) p. K. K. C. Bhar, Infrared Phys. Vol. 24 (1984) p. R. Penn, Phys. Rev. Vol. 128 (1962) p. A. Van Vechten, Phys. Rev. Vol. 182 (1969) p. 891 [30] G. A. Samara, Phys. Rev. B Vol. 27 (1983) p. my Keywords: MgO, thin film, band gap, PLD. Abstract. MgO thin films were deposited by Pulsed Laser deposition using different process parameter.

The IR spectra show two strong absorption bands around ~600 cm-1 and ~400 cm-1. In addition, there are weak bands around 1500–1700 cm-1, 1300–1500 cm-1 and ~850 cm-1. In the spectrum of A2BB'O6, two strong absorption bands in the 600–400 cm-1 have been reported which are assigned to the ν3 and ν4 modes of BO6 octahedra. Accordingly the two strong absorption bands in the 600–400 cm-1 regions may be assigned to the ν3 and ν4 modes of BO6 (B= Sb, Zr) octahedra. The weak band at ~850 cm-1 that may be ascribed to ν1 mode of BO6 octahedra is usually an IR inactive vibration.

Kagel: Infrared Spectra of Inorganic Compounds (Academic Press, New York 1971). [11] K. Nakamoto: Infrared and Raman Spectra of Inorganic and Coordination Compounds (Wiley, New York 1986) 4th ed. 32 Optical properties of Si quantum dot potential under pressure effect Y. Al-Douri Institute of Nono Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis, Malaysia. com. Keywords: Quantum-Dot, Pressure Effect, Optical properties Abstract. Further study of the quantum dot potential under hydrostatic pressure for Si is presented.

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